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 WBDL301
Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes
P b Lead(Pb)-Free
Silicon HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 VOLTS
Features:
* Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. -- 1.5pF(MaX)@VR = 15V * Low Reverse Leakage. -- IR = 13nAdc(Typ) * Schottky Barrier Diodes Encapsulated in SOD-323 Package.
1 2
Applications:
* For High Efficiency UHF and VHF Detector. * For Fast Switiching RF and Digital Applications. * For High-Volume Consumer and industrial / Commercial Requirement.
SOD-323
SOD-323 Outline Demensions
Unit:mm
MILLMETERS Min Max
Dim 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 0.25 0.40 D E 0.15 REF H 0.00 0.10 J 0.089 0.377 K 2.30 2.70
PIN 1.CATHODE 2.ANODE
WEITRON
http://www.weitron.com.tw
1/3
25-Oct-05
WBDL301
MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Characteristics
Reverse Voltage Total Device Dissipation FR-5 Board(1), TA=25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Note: FR-5 Minimum Pad
Symbol
VR PD RJA TJ, Tstg
Value
30 200 1.57 635 -55 to +150
Unit
V mW mW/C C/W C
ELECTRICAL CHARACTERISTICS Characteristics
Reverse Breakdown Voltage IR = 10A Maximum instantneous Forward Voltage IF=1.0mA IF=10mA Reverse Leakage VR = 25V Diode Capacitance VR = 15V, f = 1.0MHz
Symbol
V(BR)R
Min
30
Typ
-
Max
-
Unit
V
VF
-
0.38 0.52 13 0.9
0.45 0.60 200 1.5
V
IR
CT
-
nA pF
Device Marking Item
WBDL301
Marking
4T
Eqivalent Circuit Diagram
1 2
WEITRON
http://www.weitron.com.tw
2/3
25-Oct-05
WBDL301
Electrical Characteristics Curves
(Ta=25C unless specified otherwise)
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime

Figure 3. Reverse Leakage
Figure 4. Forward Voltage
Figure 5. Krakauer Method of Measuring Lifetime
WEITRON
http://www.weitron.com.tw
3/3
25-Oct-05


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